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DLA - SMD-5962-95713

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 January 1996
Status: inactive
Page Count: 18
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 82C54RH Radiation hardened CMOS programmable interval timer

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style J CDIP2-T24 24 Dual-in-line package X CDFP4-F24 24 Ceramic flat pack

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage (VDD) - - - - - - - - - - - - - - - - - - - - +7.0 V dc Input or output voltage range - - - - - - - - - - - - - - - VSS −0.3 V dc to VDD to VDD+0.3 V dc Storage temperature range (TSTG) - - - - - - - - - - - - - - −65°C to +150°C Junction temperature (TJ) - - - - - - - - - - - - - - - - - +175°C Thermal resistance Junction-to-case (ΘJC): Case J - - - - - - - - - - - - - - - - - - - - - - - - - +6°C/W Case X - - - - - - - - - - - - - - - - - - - - - - - - - +4°C/W Thermal resistance Junction-to-ambient (ΘJA): Case J - - - - - - - - - - - - - - - - - - - - - - - - - +40°C/W Case X - - - - - - - - - - - - - - - - - - - - - - - - - +60°C/W Maximum package power dissipation at TA = +125°C (PD) 2/ Case J - - - - - - - - - - - - - - - - - - - - - - - - - +1.25 W Case X - - - - - - - - - - - - - - - - - - - - - - - - - +0.83 W Lead temperature (soldering, 10 seconds) - - - - - - - - - - +300°C

Operating supply voltage range (VDD) - - - - - - - - - - - - - 4.5 V dc to +5.5 V dc Operating temperature range (TA) - - - - - - - - - - - - - - - −55°C to +125°C Input low voltage range (VIL) - - - - - - - - - - - - - - - - 0 V dc to +0.8 V dc Input high voltage range (VIH) - - - - - - - - - - - - - - - - VDD −1.5 V dc to VDD Radiation features Total dose - - - - - - - - - - - - - - - - - - - - - - - - - > 100 k Rads(SI) Transient upset - - - - - - - - - - - - - - - - - - - - - - > 108 RAD(SI)/sec 3/ Single event upset (SEU) - - - - - - - - - - - - - - - - - - 22 MEV/(mg/cm2) 3/ Single event latchup (SEL) - - - - - - - - - - - - - - - - - 60 MEV/(mg/cm2) 3/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

March 24, 2022
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q), space application (device class V) and for appropriate satellite and similar...
July 15, 2015
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
April 17, 2007
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 8, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
DD Form 1695, APR 92 Previous editions are obsolete.
SMD-5962-95713
January 16, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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