DLA - SMD-5962-90617
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 9 November 1992 |
| Status: | inactive |
| Page Count: | 50 |
Document History
February 22, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 15, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 2, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
December 9, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
SMD-5962-90617
November 9, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.