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DOD - SMD 5962-90617

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 15 May 2008
Status: inactive
Page Count: 47
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

February 22, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-90617
May 15, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 2, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
December 9, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
November 9, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.

References

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