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DLA - SMD-5962-95613

MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 7 November 1995
Status: inactive
Page Count: 17
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance with the class H requirements of MIL-PRF-38534. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WMS512KB-120CQ 512K × 8 SRAM 120 ns 02 WMS512KB-100CQ 512K × 8 SRAM 100 ns 03 WMS512K8-85CQ 512K × 8 SRAM 85 ns 04 WMS512KB-70CQ 512K × 8 SRAM 70 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation H Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style Y See figure 1 32 DIP, ceramic, single cavity

The lead finish shall be as specified in MIL-PRF-38534 for classes H and K. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc Signal voltage range (Vg) . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to VCC +0.5 Power dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . 1.0 W Storage temperature range . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . +300°C Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . 150°C

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Input low voltage range (VIL) . . . . . . . . . . . . . . . . . . . . −0.3 V dc to +0.8 V dc Input high voltage range (VIH) . . . . . . . . . . . . . . . . . . . +2.2 V dc to VCC +0.3 V dc Output low voltage, maximum (VOL) . . . . . . . . . . . . . . . . . . +0.4 V dc Output high voltage, minimum (VOH) . . . . . . . . . . . . . . . . . +2.4 V dc Ambient operating temperature range (TA) . . . . . . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

July 3, 2023
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON
Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes are available and are reflected in the Part...
April 2, 2012
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
August 4, 2008
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
May 28, 2004
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
A description is not available for this item.
February 8, 2001
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
April 30, 1999
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents one product assurance class, class H (high reliability) for monolithic microcircuits to be processed in accordance with of MIL-PRF-38534. A choice of case outlines and lead...
June 22, 1998
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents one product assurance class, class H (high reliability) for monolithic microcircuits to be processed in accordance with of MIL-PRF-38534. A choice of case outlines and lead...
February 18, 1998
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance...
April 28, 1997
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
A description is not available for this item.
October 22, 1996
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance...
August 23, 1996
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance...
SMD-5962-95613
November 7, 1995
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance...

References

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