DLA - MIL-PRF-19500/661C
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
inactive
| Organization: | DLA |
| Publication Date: | 7 August 2006 |
| Status: | inactive |
| Page Count: | 27 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
November 23, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications....
January 24, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications....
February 25, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications....
April 17, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor intended for use in...
June 18, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor intended for use in...
MIL-PRF-19500/661C
August 7, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor intended for use in...
December 7, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects), power transistor intended for use in high...
October 27, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects), power transistor intended for use in high...
June 16, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392 JANTXVR; AND JANSR
A description is not available for this item.
August 18, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392 JANTXVR; AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects), power transistor intended for use in high...