NPFC - MIL-PRF-19500/733
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, DEVICE, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
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| Organization: | NPFC |
| Publication Date: | 6 May 2015 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. applications. See 6.7 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 18, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F
A description is not available for this item.
October 22, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
February 4, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
March 12, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 9, 2016
TRANSISTOR, FIELD EFFECT RADIATION HARDENED * P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 4, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/733
May 6, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, DEVICE, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 18, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
September 10, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 12, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 30, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...