This standard covers the design of printed circuit boards (PCBs) used in the thermal characterization of ball grid array (BGA) and land grid array (LGA) packages. It is intended to be used in conjunction with the JESD51 series of standards that cover the test methods and test environments....
This standard describes design requirements for a single layer, leaded surfacemount integrated circuit package thermal test board. The standard describes board material and geometry requirements, minimum trace lenghts, trace thickness, and routing considerations. Application...
This fixturing further defines the environment for thermal test of packaged microelectronic devices. Its function is to provide an alternate mountingsurface for the analysis of heat flow in electronic components. The objective of the standard is to provide a high effective...
Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Three levels of product assurance (JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance (JANHC and JANKC) are provided for each...
Scope. This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance (JAN) is provided for each device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche...
Scope. This specification covers the performance requirements for silicon, Schottky power rectifier diodes in a dual diode, common cathode configuration for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS)...
Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche...
Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device...
Scope. This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum...
Scope. This specification covers the performance requirements for silicon, Schottky, dual anode, common cathode, power rectifier diodes for use in high frequency switching applications. Three levels of product assurance (JANTX, JANTXV, AND JANS) are provided for each device type as specified in...
Scope. This specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for silicon diodes. Three levels of product assurance are provided for each encapsulated device type (JAN, JANTX and JANTXV) as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC)...
Scope. This specification covers the performance requirements for silicon, ultra fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for use as a general purpose silicon rectifier diode or as a low speed switching rectifier diode. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each device type as specified in MIL-PRF-19500.
This specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode thyristors. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each device type as specified in MIL-PRF-19500.
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