DOD - SMD 5962-96795
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 22 July 2016 |
| Status: | active |
| Page Count: | 25 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
November 6, 2023
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD 5962-96795
July 22, 2016
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 21, 2009
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 27, 2004
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
February 18, 1998
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
December 20, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
May 17, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...