NPFC - MIL-PRF-19500/741
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
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| Organization: | NPFC |
| Publication Date: | 18 November 2019 |
| Status: | active |
| Page Count: | 23 |
scope:
Scope.
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two levels of product assurance (JANHC and JANKC) are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to four radiation levels ("G", "H", "R" and "F") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/741
November 18, 2019
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
Scope.
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor...
April 13, 2018
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
A description is not available for this item.
March 14, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...