DLA - SMD-5962-90622 REV F
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 1 August 2022 |
| Status: | active |
| Page Count: | 43 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
SMD-5962-90622 REV F
August 1, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
November 16, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 3, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 20, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
DD Form 1695, APR 92
Previous editions are obsolete.
March 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
October 30, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
March 5, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...