DLA - SMD-5962-97631 REV B
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 16 January 2024 |
| Status: | active |
| Page Count: | 22 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
SMD-5962-97631 REV B
January 16, 2024
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
May 29, 2013
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
September 11, 1998
MICROCIRCUIT, MEMORY, CMOS, 32K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...