DLA - SMD-5962-95625 REV C
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 24 January 2024 |
| Status: | active |
| Page Count: | 35 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class N) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
SMD-5962-95625 REV C
January 24, 2024
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class N) and space application (device class V). A choice of case outlines and lead finishes...
June 14, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16-MEG USER-CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of non-traditional (device class N), high reliability (device class Q), and space application (device class V). A choice of case...
August 23, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
A description is not available for this item.
December 8, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high...