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DOD - SMD 5962-08240

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K x 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, NONVOLATILE RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 4 June 2018
Status: active
Page Count: 20
scope:

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

MIL-PRF-38535 DEPARTMENT MIL-STD-883 MIL-STD-1835 DEPARTMENT MIL-HDBK-103 MIL-HDBK-780 ASTM F1192 JEDEC JESD78 JEDEC JESD22-A117 JEDEC JESD47

Document History

SMD 5962-08240
June 4, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K x 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, NONVOLATILE RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 17, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K x 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, NONVOLATILE RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
September 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, Nonvolatile RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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