DOD - SMD 5962-08240
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, Nonvolatile RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 17 September 2010 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
June 4, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K x 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, NONVOLATILE RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 17, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K x 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, NONVOLATILE RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-08240
September 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 8 WITH ECC, 3.3 VOLT, RADIATION HARDENED, Nonvolatile RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...