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DLA - SMD-5962-94716

MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT

inactive
Organization: DLA
Publication Date: 16 December 1994
Status: inactive
Page Count: 24
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with MIL-H-38534. Two product assurance classes, military high reliability (device class H) and space application (device class K) and a choice of case outlines and lead finishes are available and are reflected in the Part or identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-H-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access Time 01 WF128K32-150HQ5 FLASH EPROM, 128K × 32-bit 150 ns 02 WF128K32-120HQ5 FLASH EPROM, 128K × 32-bit 120 ns 03 WF128K32-90HQ5 FLASH EPROM, 128K × 32-bit 90 ns 04 WF128K32-70HQ5 FLASH EPROM, 128K × 32-bit 70 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation H or K Certification and qualification to MIL-M-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style S See figure 1 66 Hex-in-line, single cavity, with standoffs T See figure 1 66 Hex-in-line, single cavity, without standoffs U See figure 1 66 Hex-in-line, single cavity, with standoffs V See figure 1 66 Hex-in-line, single cavity, without standoffs W See figure 1 66 Hex-in-line, single cavity, with standoffs X See figure 1 66 Hex-in-line, single cavity, without standoffs Y See figure 1 66 Hex-in-line, single cavity, with standoffs Z See figure 1 66 Hex-in-line, single cavity, without standoffs

The lead finish shall be as specified in MIL-H-38534 for classes H and K. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) 2/ .......................... −2.0 V dc to +7.0 V dc Signal Voltage range (any pin except A9) 2/............. −2.0 V dc to +7.0 V dc Power dissipation (PD).................................. 1.1 W Storage temperature range............................... −65 °C to +150 °C Lead temperature (soldering, 10 seconds)................ +300 °C Data retention.......................................... 10 years minimum Endurance (write/erase cycles).......................... 10,000 cycles minimum A9 voltage for sector protect (VID) 3/.................. −2.0 V dc to +14.0 V dc

Supply voltage range (VCC).............................. +4.5 V dc to +5.5 V dc Input low voltage range (VIL)........................... −0.5 V dc to +0.8 V dc Input high voltage range (VIH).......................... +2.0 V dc to VCC + 0.3 V dc Case operating temperature range (TC)................... −55 °C to +125 °C A9 voltage for sector protect (VID)..................... +11.5 V dc to +12.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

October 25, 2016
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY, 128K x 32-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
November 10, 2003
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
A description is not available for this item.
February 21, 2003
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
A description is not available for this item.
January 13, 2003
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
A description is not available for this item.
June 20, 2000
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest...
June 25, 1998
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
August 30, 1996
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing documents two product assurance classes, high reliability (device class H) and space application (device class K) and a choice of case outlines and lead finishes are available and are...
SMD-5962-94716
December 16, 1994
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...

References

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