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DLA - SMD-5962-94716 REV A

MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT

inactive
Organization: DLA
Publication Date: 30 August 1996
Status: inactive
Page Count: 38
scope:

This drawing documents two product assurance classes, high reliability (device class H) and space application (device class K) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access Time 01 WF128K32-150HQ5, ACT-F128K32N-150 FLASH EPROM, 128K × 32-bit 150 ns 02 WF12BK32-120HQ5, ACT-F128K32N-120 FLASH EPROM, 128K × 32-bit 120 ns 03 WF12BK32-90HQ5, ACT-F128K32N-090 FLASH EPROM, 128K × 32-bit 90 ns 04 WF128K32-70HQ5, ACT-F128K32N-070 FLASH EPROM, 128K × 32-bit 70 ns 05 WF128K32-60HQ5 FLASH EPROM, 128K × 32-bit 60 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation H or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style M See figure 1 68 Ceramic, dual cavity, quad pack, lead formed N See figure 1 68 Ceramic, low profile, single cavity, quad pack, lead formed S See figure 1 66 Hex-in-line, single cavity, with standoffs T See figure 1 66 Hex-in-line, single cavity, without standoffs U See figure 1 66 Hex-in-line, single cavity, with standoffs V See figure 1 66 Hex-in-line, single cavity, without standoffs W See figure 1 66 Hex-in-line, single cavity, with standoffs X See figure 1 66 Hex-in-line, single cavity, without standoffs Y See figure 1 66 Hex-in-line, single cavity, with standoffs Z See figure 1 66 Hex-in-line, single cavity, without standoffs 4 See figure 1 68 Cermic, single cavity, quad flat pack 5 See figure 1 66 1.075", hex-in-line, single cavity, with standoffs 6 See figure 1 66 1.075", hex-in-line, single cavity, with standoffs 7 See figure 1 66 1.075", hex-in-line, single cavity, with standoffs 8 See figure 1 66 1.075", hex-in-line, single cavity, with standoffs

The lead finish shall be as specified in MIL-PRF-38534 for classes H and K.

Supply voltage range (VCC) 2/ .............................. −2.0 V dc to +7.0 V dc Signal Voltage range (any pin except A9) 2/ ................ −2.0 V dc to +7.0 V dc Power dissipation (PD) ..................................... 1.1 W Storage temperature range .................................. −65°C to +150°C Lead temperature (soldering 10 seconds) .................... +300°C Data retention ............................................. 10 years minimum Endurance (write/erase cycles) ............................. 10,000 cycles minimum A9 voltage for sector protect(VID) 3/ ...................... −2.0 V dc to +14.0 V dc

Supply voltage range (VCC) ................................. +4.5 V dc to +5.5 V dc Input low voltage range (VIL) .............................. −0.5 v dc to +0.8 V dc Input high voltage range (VIH) ............................. +2.0 V dc to VCC + 0.3 V dc Case operating temperature range (TC) ...................... −55°C to +125°C A9 Voltage for sector protect (VID) ........................ +11.5 V dc to +12.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications(original equipment), design applications, and logistics purposes.

Document History

October 25, 2016
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY, 128K x 32-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
November 10, 2003
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
A description is not available for this item.
February 21, 2003
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
A description is not available for this item.
January 13, 2003
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
A description is not available for this item.
June 20, 2000
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest...
June 25, 1998
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-94716 REV A
August 30, 1996
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing documents two product assurance classes, high reliability (device class H) and space application (device class K) and a choice of case outlines and lead finishes are available and are...
December 16, 1994
MICROCIRCUIT, HYBRID, DIGITAL, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 32-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...

References

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