DLA - MIL-PRF-19500/684H (3)
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
|Publication Date:||11 September 2020|
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. See 6.7 for JANHC and JANKC die versions.
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.