UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

NPFC - MIL-PRF-19500/684

Semiconductor Device, Transistor, Field Effect, Silicon, NChannel, Radiation Hardened (Total Dose and Single Event Effects), Types 2N7472U2, 2N7473U2, and 2N7474U2, JANTXVR and JANSR

inactive
Buy Now
Organization: NPFC
Publication Date: 2 November 2015
Status: inactive
Page Count: 1

Document History

TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXV AND JANS
A description is not available for this item.
October 22, 2021
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXV AND JANS
Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels...
September 11, 2020
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels...
January 31, 2020
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels...
November 23, 2018
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
November 17, 2016
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
July 27, 2016
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
April 15, 2016
TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED SURFACE MOUNT PACKAGE, TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
MIL-PRF-19500/684
November 2, 2015
Semiconductor Device, Transistor, Field Effect, Silicon, NChannel, Radiation Hardened (Total Dose and Single Event Effects), Types 2N7472U2, 2N7473U2, and 2N7474U2, JANTXVR and JANSR
A description is not available for this item.
October 27, 2010
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
November 10, 2009
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
July 23, 2007
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
February 23, 2006
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of...
December 22, 2004
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event effects (SEE) ratings, with...
October 27, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event effects (SEE) ratings, with...
August 5, 2002
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
A description is not available for this item.
June 7, 2001
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
A description is not available for this item.
October 6, 2000
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event effects (SEE) ratings, with...
Advertisement