NPFC - MIL-PRF-19500/157
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
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| Organization: | NPFC |
| Publication Date: | 6 April 2012 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
February 23, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, AND 1N946B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
Scope.
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
January 17, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, AND 1N946B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV,...
January 17, 2017
Semiconductor Device, Diode, Silicon, Temperature Compensated Voltage-Reference, Types 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, and 1N946BUR-1, JAN, JANTX, JANTXV, and JANS, Radiation Hardened (Total Dose Only) JANTXVM, D, L, R, F, G, H, and JANSM, D, L, R, F, G, and H
A description is not available for this item.
MIL-PRF-19500/157
April 6, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
February 4, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
March 18, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type...
February 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES, 1 N941 B, 1 N941 B-I , 1 N943B, 1 N943B-1, 1 N944B, 1 N944B-1, 1 N945B, 1 N945B-1, 1 N946B, 1 N946B-1, 1 N941 BUR-I, 1 N943BUR-1, 1 N944BUR-1, 1 N945BUR-1, AND 1 N946BUR-1 JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
A description is not available for this item.
November 12, 1999
SEM I CONDUCTOR DEVI CE, DI OD E, SI LI CON , VO LTAGE-REF EREN CE TYP ES 1 N941 B, 1 N941 B-I, 1 N943B, 1 N943B-1, 1 N944B, 1 N944B-1, 1 N945B, 1 N945B-1, 1 N946B, 1 N946B-1, 1 N941 BUR-I, 1 N943BUR-1, 1 N944BUR-1, 1N945BUR-1, AND 1N946BUR-1 JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference diodes. Five levels of product assurance are provided for each encapsulated device type...
July 1, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type...
November 25, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N941B, 1N943B, 1N944B, 1N945B, 1N946B, 119418-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, lN941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND lN946BUR-1 JAN, JANTX, JANTXV AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the detail requirements for 11.70 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
December 9, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N9418, 1N9438, 1N9468-1, 1N9418UR-I, lN9438UR-1, 1N9446UR-1, lN945BUR-1, lN9466UR-1, 1 N9448, 1 N9456, 1 N9468, 1 N9416-1, 1 N9436-1, 1 N9446-1, 1 N9458-1 , JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 11.70 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in...
August 25, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, lN944BUR-1, lN945BUR-1, 1N946BUR-1, TYPES 1N941B , 1N943B, 1N944B, 1N945B, 1N946B, JANTX, JANTXV, AND JANS
A description is not available for this item.
December 2, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPE 1N941B, 1N943B THROUGH 1N945B, -1, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
January 19, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B, TX1N941B, TX1N943B, TX1N944B, AND TX1N945B
A description is not available for this item.
October 11, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B, TX1N941B, TX1N943B, TX1N944B, AND TX1N945B
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B, TX1N941B, TX1N943B, TX1N944B, AND TX1N945B
A description is not available for this item.
October 16, 1972
SEMICDNDUCTOR DEVICE, DIODE, SILICON, VOLTAGE -RE FERENCE TYPES 1N941B 1N943B, 1N944B, 1N945B, TXlN941B, TXlN943B, TXlN944B, AND TXlN945B
A description is not available for this item.
March 17, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B TX AND NON-TX
A description is not available for this item.
May 6, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B TX and non-TX
A description is not available for this item.
June 2, 1967
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
A description is not available for this item.
April 25, 1966
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N941B, 1N943B, 1N944B, AND 1N945B
A description is not available for this item.
March 3, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N941B, 1N943B, 1N944B, AND 1N945B
A description is not available for this item.
August 10, 1964
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N941B, 1N943B, 1N944B, AND 1N945B
A description is not available for this item.