DLA - MIL-S-19500/157K
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N941B, 1N943B, 1N944B, 1N945B, 1N946B, 119418-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, lN941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND lN946BUR-1 JAN, JANTX, JANTXV AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
inactive
| Organization: | DLA |
| Publication Date: | 25 November 1994 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the detail requirements for 11.70 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-S-19500.
See figure 1 (DO-7 and DO-35) and figure 2 (DO-213AA).
Unless otherwise specified, primary electrical characteristics at TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
February 23, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, AND 1N946B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
Scope.
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
January 17, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, AND 1N946B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV,...
January 17, 2017
Semiconductor Device, Diode, Silicon, Temperature Compensated Voltage-Reference, Types 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, and 1N946BUR-1, JAN, JANTX, JANTXV, and JANS, Radiation Hardened (Total Dose Only) JANTXVM, D, L, R, F, G, H, and JANSM, D, L, R, F, G, and H
A description is not available for this item.
April 6, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
February 4, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
March 18, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type...
February 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES, 1 N941 B, 1 N941 B-I , 1 N943B, 1 N943B-1, 1 N944B, 1 N944B-1, 1 N945B, 1 N945B-1, 1 N946B, 1 N946B-1, 1 N941 BUR-I, 1 N943BUR-1, 1 N944BUR-1, 1 N945BUR-1, AND 1 N946BUR-1 JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
A description is not available for this item.
November 12, 1999
SEM I CONDUCTOR DEVI CE, DI OD E, SI LI CON , VO LTAGE-REF EREN CE TYP ES 1 N941 B, 1 N941 B-I, 1 N943B, 1 N943B-1, 1 N944B, 1 N944B-1, 1 N945B, 1 N945B-1, 1 N946B, 1 N946B-1, 1 N941 BUR-I, 1 N943BUR-1, 1 N944BUR-1, 1N945BUR-1, AND 1N946BUR-1 JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference diodes. Five levels of product assurance are provided for each encapsulated device type...
July 1, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type...
MIL-S-19500/157K
November 25, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N941B, 1N943B, 1N944B, 1N945B, 1N946B, 119418-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, lN941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND lN946BUR-1 JAN, JANTX, JANTXV AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification covers the detail requirements for 11.70 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
December 9, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N9418, 1N9438, 1N9468-1, 1N9418UR-I, lN9438UR-1, 1N9446UR-1, lN945BUR-1, lN9466UR-1, 1 N9448, 1 N9456, 1 N9468, 1 N9416-1, 1 N9436-1, 1 N9446-1, 1 N9458-1 , JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 11.70 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in...
August 25, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, lN944BUR-1, lN945BUR-1, 1N946BUR-1, TYPES 1N941B , 1N943B, 1N944B, 1N945B, 1N946B, JANTX, JANTXV, AND JANS
A description is not available for this item.
December 2, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPE 1N941B, 1N943B THROUGH 1N945B, -1, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
January 19, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B, TX1N941B, TX1N943B, TX1N944B, AND TX1N945B
A description is not available for this item.
October 11, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B, TX1N941B, TX1N943B, TX1N944B, AND TX1N945B
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B, TX1N941B, TX1N943B, TX1N944B, AND TX1N945B
A description is not available for this item.
October 16, 1972
SEMICDNDUCTOR DEVICE, DIODE, SILICON, VOLTAGE -RE FERENCE TYPES 1N941B 1N943B, 1N944B, 1N945B, TXlN941B, TXlN943B, TXlN944B, AND TXlN945B
A description is not available for this item.
March 17, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B TX AND NON-TX
A description is not available for this item.
May 6, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N941B, 1N943B, 1N944B, 1N945B TX and non-TX
A description is not available for this item.
June 2, 1967
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
A description is not available for this item.
April 25, 1966
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N941B, 1N943B, 1N944B, AND 1N945B
A description is not available for this item.
March 3, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N941B, 1N943B, 1N944B, AND 1N945B
A description is not available for this item.
August 10, 1964
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N941B, 1N943B, 1N944B, AND 1N945B
A description is not available for this item.