This specification is intended to support Government microcircuit application and logistic programs. Detailed characteristics of microcircuits needed for a program are to be defined by the device specification.
*TABLE IA. Microcircuit screening procedure for hermetic QML microcircuits.
Screen MIL-STD-883 test method and condition
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1. Electrostatic Discharge Sensitivity (ESD) 3015 (see 4.2.3, initial qualification only)
2. Wafer acceptance TRB plan (see H.3.2.3)
3. Internal visual 2010, test condition B (see J.3.3)
4. Temperature cycling 1010, test condition C, 50 cycles minimum
5. Constant acceleration 2001, test condition E (minimum) Y1 orientation only (see
J.3.4)
6. Serialization In accordance with device specification
7. Interim (pre burn-in) electrical parameters In accordance with device specification
8. Burn-in test 1015, 160 hours at +125°C minimum (see J.3.5)
9. Interim (post burn-in) electrical parameters In accordance with device specification
10. Percent Defective Allowable (PDA) calculation 5 percent, all lots (subgroup I, table III, herein)
11. Final electrical test In accordance with device specification
a. Static test (table III)
1. +25°C
2. Maximum and minimum rated operating
temperature
b. Dynamic or functional tests (table III)
1. +25°C
2. Maximum and minimum rated operating
temperature
c. Switching tests (tableIII)
1. +25°C
2. Maximum and minimum rated operating
temperature
12. Seal 1014 (see J.3.7)
a. Fine
b. Gross
13. External visual 2009
TABLE IB. Tests/monitors for plastic packages. 1/
Test/monitor MIL-STD-883 test method or industry standard
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1. Wafer acceptance TRB plan (see H.3.2.3)
2. Internal visual TM 2010 or per manufacturers internal procedures
3. Temperature cycling/thermal shock TM 1010/TM 1011
4. Resistance to solvents TM 2015
5. Bond strength TM 2011
6. Ball shear ASTM F 1269
7. Solderability TM 2003
8. Die Shear or stud pull TM 2019 or TM 2027
9. Steady-state life test TM 1005
Endpoint electricals per device specification
10. Physical dimensions TM 2016
11. Lead integrity TM 2004
12. Inspection for delamination e.g., TM 1034 (dye penetrant), cross-sectioning, CSAM etc.
13. HAST 100 hours, +130°C, 85% RH 2/
14. Autoclave JESD 22-A102 (no bias) 2 atm., +121°C
15. Salt atmosphere TM 1009
16. Adhesion to lead finish TM 2025
17. Interim pre bum-in electricals Per device specification
18. Burn-in test TM 1015, 160 hours at +125°C or per manufacturers OM plan
19. Interim post bum-in electricals Per device specification
20. Percent Defective Allowable (PDA) or alternate 1% PDA or per manufacturer's QM plan
procedure for lot acceptance
21. Final electrical tests (see table III, herein, for Per device specification
definition of subgroups)
a. static
b. dynamic
c. functional
d. switching
22. External visual TM 2009 or JESD 22-B101 or manufacturers internal procedures
1/ Test methods are listed herein to give the manufacturer an available method to use. Alternate procedures and test
methods may be used. Monitor frequency and sample plan shall be in accordance with manufacturer's QM plan.
2/ An alternate process monitor may be used; e.g., +85°C/85% RH.
TABLE II. Group B tests.
MIL-STD-883 Minimum sample size
Subgroup quantity (accept no.)
Test Test Condition
method
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1 Resistance to solvents 2015 3(0)
2 Bond strength 2011 22(0)
(1) Thermo compression (1) C or D Based on the number of
(2) Ultrasonic (2) C or D wires
(3) Flip-chip (3) F
(4) Beam lead (4) H
Die shear test 2019 or 3(0)
or stud pull 2027
3 Solderability 2003 Solder temperature See J.3.9.2
+245°C ±5°C
*TABLE III. Group A electrical tests. 1/
Subgroup Parameters Quantity (accept no.)
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1 Static tests at +25°C 116(0)
2 Static tests at maximum rated operating temperature 116(0)
3 Static tests at minimum rated operating temperature 116(0)
4 Dynamic tests at +25°C 116(0)
5 Dynamic tests at maximum rated operating temperature 116(0)
6 Dynamic tests at minimum rated operating temperature 116(0)
7 Functional tests at +25°C 116(0)
8 Functional tests at maximum and minimum rated operating 116(0)
temperature
9 Switching tests at +25°C 116(0)
10 Switching tests at maximum rated operating temperature 116(0)
11 Switching tests at minimum rated operating temperature 116(0)
1/ The specific parameters to be included for test in each subgroup shall be as specified in the device specification.
Where no parameters have been identified in a particular subgroup or test within a subgroup, no group A testing is
required for that subgroup or test to satisfy group A requirements.
TABLE IV. Group C tests.
MIL-STD-883 Quantity
Test (accept no.)
Test method Condition
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Subgroup 1 1005 Test condition to be specified 45(0)
a. Steady-state (1,000 hrs at +125°C or
life test equivalent)
b. End-point electrical As specified in the applicable
parameters device procurement specification
TABLE V. Group D tests.
MIL-STD-883
Subgroup Quantity
accept no.)
Test Test method Condition
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1 Physical dimensions 2016 15(0)
2 a. Lead integrity 2004 B2 fatigue or as applicable 15(0)
for the package technology
style
b. Seal
(1) Fine 1014 As applicable
(2) Gross 1014 As applicable
3 a. Thermal shock 1011 B, 15 cycles 15(0)
b. Temperature cycling 1010 C, 100 cycles
c. Moisture resistance 1004
d. Seal 1014 As applicable
(1) Fine
(2) Gross
e. Visual 1004, 1010
f. End-point electricals As specified in the
applicable device
specification
4 a. Shock 2002 B 15(0)
b. Vibration, variable frequency 2007 A
c. Acceleration 2001 E, Y1 orientation or in
accordance withJ.3.4
d. Seal 1014 As applicable
(1) Fine
(2) Gross
e. Visual examination 2009
f. End-point electricals As specified in the
applicable device
specification
5 a. Salt atmosphere 1009 A 15(0)
b. Seal 1014 As applicable
(1) Fine
(2) Gross
c. Visual 1009 (Visual criteria)
6 Internal water vapor (cavity packages) 1018 5000 ppm +100°C 3(0) or 5(l)
7 Adhesion of lead finish 2025 15(0)
8 Lid torque 2024 glass frit seal only 5(0)
Microcircuits conforming to this appendix are intended for use for Government microcircuit application and logistic purposes. For maximum cost effectiveness while maintaining essential quality and reliability requirements, it is recommended that, for initial acquisitions for original equipment complements, the device class appropriate to the need of the application (see A.3.4) be acquired.
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