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DLA - SMD-5962-91532 REV B

MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 1 August 1997
Status: inactive
Page Count: 12
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 3702 Dual, low power, voltage comparator 02 3702 Dual, low power, voltage comparator

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual in line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VDD) .................... −0.3 V to 18 V 2/ Differential input voltage .................... ±18 V 3/ Input voltage range (VIN) ..................... −0.3 V to VDD Output voltage range (VOUT) ................... −0.3 V to VDD Input current (IIN) ........................... ±5 mA Output current (IOUT), each output ............ ±20 mA Total current into VDD terminal ............... 40 mA Total current out of ground terminal .......... 40 mA Storage temperature range ..................... −65°C to +150°C Lead temperature (soldering, 10 seconds) ...... 300°C Junction temperature (TJ) ..................... +150°C Power dissipation (PD): 4/ Case H ...................................... 675 mW Case P ...................................... 1050 mW Case 2 ...................................... 1375 mW Thermal resistance, junction-to-case (ΘJC) .... See MIL-STD-1835 Thermal resistance, junction-to-ambient (ΘJA): Cases H and P ............................... 180°C/W Case 2 ...................................... 65°C/W

Supply voltage range: Device type 01 .............................. 4 V ≤ VDD ≤ 16 V Device type 02 .............................. 2.5 V ≤ VDD ≤ 5.5 V Common mode input voltage (VIC) ............... 0 V ≤ VIC ≤ VDD − 1.5V High level output current ..................... −20 mA Low level output current ...................... 20 mA Ambient operating temperature range (TA) ...... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

November 14, 2018
MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
July 11, 2013
MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 6, 2004
MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-91532 REV B
August 1, 1997
MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 17, 1996
MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON
A description is not available for this item.
October 11, 1995
MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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