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DLA - SMD-5962-89905 REV A

MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 6 October 1995
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 1823 High speed PWM controller 02 1823A High speed PWM controller 03 1823B High speed PWM controller

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CD1P2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X' shall not be marked on the microcircuit or its packaging. The "X' designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage (VS): Device type 01 .................................... 30 V dc Device types 02 and 03 ............................ 22 V dc DC output current, source or sink ................... 0.5 A Pulse output current, sink or source (0.5 µs): Device type 01 .................................... 2.0 A Device types 02 and 03 ............................ 2.2 A Analog input voltage: Device type 01 (pins 1, 2, 7, 8 and 9) 1/ ......... −0.3 V dc to 6.0 V dc Device types 02 and 03 (pins 1, 2 and 7) 1/ ....... −0.3 V dc to 7.0 v dc Device types 02 and 03 (pins 8 and 9) 1/ .......... −0.3 V dc to 6.0 V dc Clock output current ................................ −5.0 mA Error amplifier output current ...................... 5. 0 mA Soft start sink current ............................. 20 mA Oscillator charging current ......................... −5.0 mA Power dissipation (PD) 2/ 3/ ........................ 1.0 W Storage temperature range ........................... −65°C to +150°C Lead temperature (soldering, 10 seconds) ............ +300°c Junction temperature (TJ) ........................... +150°C Thermal resistance, junction-to-case (ΘJC) .......... see MIL-STD-1835 Thermal resistance, junction-to-ambient (ΘJA: Case outline E ..................................... 80°C/W Case outline 2 .................................... 70°C/W Power ground: Device types 02 and 03 .............................. ± 0.2 V

Supply voltage (VS)...................................................................... 10 V dc to 30 V dc Ambient operating temperature (TA)....................................................... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

June 20, 2018
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
August 22, 2012
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
October 18, 2010
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 20, 2009
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 4, 2002
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
A description is not available for this item.
March 20, 2001
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 4, 1999
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 27, 1998
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
SMD-5962-89905 REV A
October 6, 1995
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 31, 1991
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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