UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-89905

MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 31 January 1991
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device letter Generic number Circuit function 01 1823 High speed PWM controller

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-Lead, .840" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package.

Supply voltage (VS) - - - - - - - - - - - - - - - - - - - - - - 30 V dc DC output current, source or sink - - - - - - - - - - - - - - - 0.5 A Pulse output current, sink or source (0.5 µs) - - - - - - - - - 2.0 A Analog input voltage (pins 1,2,7,8 and 9) 1/ - - - - - - - - - −0.3 v dc to 6.0 v dc Clock output current - - - - - - - - - - - - - - - - - - - - - - −5.0 mA Error amplifies output current - - - - - - - - - - - - - - - - - 5.0 mA Soft start sink current - - - - - - - - - - - - - - - - - - - - 20 mA Oscillator charging current - - - - - - - - - - - - - - - - - - −5.0 mA Power dissipation (PD) 2/ 3/ - - - - - - - - - - - - - - - - - - 1.0 W Storage temperature range - - - - - - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - +300°C Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - +150°C Thermal resistance, junction-to-case (θJC) - - - - - - - - - - - See MIL-M-38510, appendix C Thermal resistance, junction-to-ambient (θJA) Case outline E - - - - - - - - - - - - - - - - - - - - - - - 80°C/W Case outline 2 - - - - - - - - - - - - - - - - - - - - - - - 70°C/W

Supply voltage range - - - - - - - - - - - - - - - - - - - - - - 10 V dc to 30 V dc Ambient operating temperature (TA) - - - - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

June 20, 2018
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
August 22, 2012
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
October 18, 2010
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 20, 2009
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 4, 2002
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
A description is not available for this item.
March 20, 2001
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 4, 1999
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 27, 1998
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
October 6, 1995
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-89905
January 31, 1991
MICROCIRCUIT, LINEAR, HIGH SPEED PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
Advertisement