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DLA - SMD-5962-87648 REV B

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 2 February 1993
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 64K × 8-bit UVEPROM 150 ns 02 64K × 8-bit UVEPROM 200 ns 05 64K × 8-bit UVEPROM 250 ns 04 64K × 8-bit UVEPROM 120 ns 05 64K × 8-bit UVEPROM 90 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line 2/ Y CQCC1-N32 32 Rectangular leadless chip carrier 2/ Z See figure 1 32 "J" lead chip carrier 2/

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Storage temperature range . . . . . . . . . . . . . . . . −65°C to +150°C Input voltages with respect to ground . . . . . . . . . . −0.6 V dc to +6.25 V dc Output voltages with respect to ground . . . . . . . . . −0.6 V dc to +6.25 V dc Voltage on pin A9 with respect to ground . . . . . . . . −0.6 V dc to +13.5 V dc VPP supply voltage with respect to ground . . . . . . . . −0.6 V dc to +14.0 V dc Power dissipation (PD) 3/ . . . . . . . . . . . . . . . . 350 mW Lead temperature (soldering, 10 seconds) . . . . . . . . +300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . +150°C

Case operating temperature range (TC) . . . . . . . . . . −55°C to +125°C Supply voltage range (VCC) . . . . . . . . . . . . . . . +4.5 V dc to 5.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 13, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K x 8 UVEPROM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
March 18, 2015
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 11, 2006
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 7, 1997
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 1, 1996
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN shall be as shown in the...
SMD-5962-87648 REV B
February 2, 1993
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 23, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON
A description is not available for this item.
June 13, 1988
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 8 UVEPROM, MONOLITHIC SILICON
A description is not available for this item.

References

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