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DLA - SMD-5962-89547 REV C

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 September 1997
Status: inactive
Page Count: 16
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

For device classes M and Q

For device class V:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 54ACT11008 Quad two-input AND gate, TTL compatible inputs 02 54ACT08 Quad two-input AND gate, TTL compatible inputs

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC)............................................. −0.5 V dc to +7.0 V dc DC input voltage range (VIN)........................................... −0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT)......................................... −0.5 V dc to VCC + 0.5 V dc DC input diode current (IIK)........................................... ±20 mA DC output diode current (IOK).......................................... ±50 mA DC output current...................................................... ±50 mA DC VCC or GND current (ICC, IGND)...................................... ±100 mA 4/ Maximum power dissipation (PD)......................................... 440 mW Storage temperature range (TSTG)....................................... −65°C to +150°C Lead temperature (soldering, 10 seconds)............................... +300°C Thermal resistance, junction-to-case (ΘJC)............................. See MIL-STD-1835 Junction temperature (TJ).............................................. +175°C

Supply voltage range (VCC)............................................. 4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH)................................. 2.0 V dc Maximum low level input voltage (VIL).................................. 0.8 V dc Input voltage range (VIN).............................................. +0.0 V dc to VCC Output voltage range (VIN)............................................. +0.0 V dc to VCC Maximum input rise or fall rate (Δ t/Δ V): ........................... 0 to 8 ns/V Case operating temperature range (TC).................................. −55°C to + 125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)......................... XX percent 6/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

November 21, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 27, 2012
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 20, 2011
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 18, 2004
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.
July 19, 2002
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.
May 29, 1998
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-89547 REV C
September 5, 1997
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 31, 1992
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 30, 1991
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.
April 10, 1989
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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