DLA - SMD-5962-92316 REV C
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 25 October 1999 |
| Status: | inactive |
| Page Count: | 28 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits... View More
Document History
May 7, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
March 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
May 31, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-92316 REV C
October 25, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
July 20, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
DD Form 1695, APR 92
Previous editions are obsolete.
June 5, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 17, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1MEG X 1 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
A description is not available for this item.