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DLA - SMD-5962-89614 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 28 March 1994
Status: inactive
Page Count: 21
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 (128K × 8) UVEPROM 300 ns 02 (128K × 8) UVEPROM 250 ns 03 (128K × 8) UVEPROM 200 ns 04 (128K × 8) UVEPROM 170 ns 05,10 (128K × 8) UVEPROM 150 ns 06,11 (128K × 8) UVEPROM 120 ns 07,12 (128K × 8) UVEPROM 90 ns 08 (128K × 8) UVEPROM 70 ns 09 (128K × 8) UVEPROM 55 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style 2/ X GDIP1-T32 or CDIP2-T32 32 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CQCC2-N32 32 Rectangular leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Storage temperature - - - - - - - - - - - - - - - - - - - - - - - - −65°C to +150°C All input or output voltage with respect to ground - - - - - - - - −0.6 V dc to VCC +0.5 V dc Voltage on A9 with respect to ground - - - - - - - - - - - - - - - −0.6 V dc to +13.0 V dc VPP supply voltage with respect to ground during programming - - - - - - - - - - - - - - - - - - - - - - - - −0.6 V dc to +13.5 V dc VCC supply voltage with respect to ground - - - - - - - - - −0.6 V dc to +7.0 V dc Power dissipation (PD) - - - - - - - - - - - - - - - - - - - 330 mW 4/ Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC): Case X, Y and Z - - - - - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - - +150°C 5/ Endurance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 50 cycles/byte, minimum Data retention - - - - - - - - - - - - - - - - - - - - - - - - - - 10 years, minimum

Case operating temperature range (TC) - - - - - - - - - - - - - - −55°C to +125°C Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - - - - - - XX percent 6/

Document History

March 1, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 18, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 5, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
A description is not available for this item.
August 4, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
December 15, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
SMD-5962-89614 REV C
March 28, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
March 24, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
March 4, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
A description is not available for this item.
September 12, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON
A description is not available for this item.

References

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