DLA - MIL-PRF-19500/685C
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
inactive
| Organization: | DLA |
| Publication Date: | 8 September 2005 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
September 30, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with...
March 8, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
September 14, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
November 18, 2016
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
October 16, 2014
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
May 6, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
April 22, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
November 11, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
January 23, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
MIL-PRF-19500/685C
September 8, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
January 19, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
November 7, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
May 8, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
A description is not available for this item.
August 16, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
A description is not available for this item.
October 6, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...