NPFC - MIL-PRF-19500/685
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
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| Organization: | NPFC |
| Publication Date: | 16 August 2001 |
| Status: | inactive |
| Page Count: | 5 |
Document History
September 30, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with...
March 8, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
September 14, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
November 18, 2016
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
October 16, 2014
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
May 6, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
April 22, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
November 11, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
January 23, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
September 8, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
January 19, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
November 7, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
May 8, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
A description is not available for this item.
MIL-PRF-19500/685
August 16, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
A description is not available for this item.
October 6, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...