JEDEC JESD 51-14
Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path
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| Organization: | JEDEC |
| Publication Date: | 1 November 2010 |
| Status: | active |
| Page Count: | 46 |
scope:
This document specifies a test method (referred to herein as "Transient Dual Interface Measurement") to determine the conductive thermal resistance "Junction-to-Case" RθJC (θJC) of semiconductor devices with a heat flow through a single path, i.e. semiconductor devices with a high conductive heat flow path from the die surface that is heated to a package case surface that can be cooled by contacting it to an external heat sink.
The thermal resistance measured using this document is RθJCx or θJCx, where x denotes the package case side, where the heat is extracted, usually top (x= top) or bottom (x= bot) side.
Document History
JEDEC JESD 51-14
November 1, 2010
Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path
This document specifies a test method (referred to herein as "Transient Dual Interface Measurement") to determine the conductive thermal resistance "Junction-to-Case" RθJC (θJC) of semiconductor...