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DOD - SMD 5962-90869

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 20 November 2015
Status: active
Page Count: 36
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-90869
November 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
A description is not available for this item.
January 22, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
October 18, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON
A description is not available for this item.

References

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