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CENELEC - EN 60749-6

Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

active, Most Current
Organization: CENELEC
Publication Date: 1 June 2017
Status: active
Page Count: 14
ICS Code (Semiconductor devices in general): 31.080.01
scope:

The purpose of this part of IEC 60749 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated.

Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.

Document History

EN 60749-6
June 1, 2017
Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
The purpose of this part of IEC 60749 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is...
August 1, 2002
Semiconductor Devices Mechanical and Climatic Test Methods Part 6: Storage at High Temperature
A description is not available for this item.

References

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