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DOD - SMD 5962-95600

MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 18 August 2008
Status: inactive
Page Count: 42
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

March 30, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
January 24, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
September 1, 2016
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 22, 2009
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-95600
August 18, 2008
MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 25, 2004
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
February 12, 2002
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
December 13, 2000
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
November 22, 2000
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
March 1, 2000
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
October 24, 1997
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 17, 1997
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 27, 1996
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
March 5, 1996
MICROCIRCUITS, MEMORY, DIGITAL, 512K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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