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DLA - SMD-5962-94612 REV A

MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT

inactive
Organization: DLA
Publication Date: 21 November 1996
Status: inactive
Page Count: 32
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WF512K32-150, ACT-F512K32N-150 EPROM FLASH, 512K X 32-bit 150 ns 02 WF512K32-120, ACT-F512K32N-120 EPROM FLASH, 512K X 32-bit 120 ns 03 WF512K32-90, ACT-F512K32N-090 EPROM FLASH, 512K X 32-bit 90 ns 04 WF512K32-70, ACT-F512K32N-070 EPROM FLASH, 512K X 32-bit 70 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation D, E, G, H, or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style M See figure 1 68 Co-fired ceramic, single/dual cavity, quad flatpack N See figure 1 68 Co-fired ceramic, single cavity, quad flatpack, low capacitance T See figure 1 68 Co-fired ceramic, single cavity, low profile, quad flatpack U See figure 1 66 Co-fired ceramic, hex-in-line, single cavity, with standoffs X See figure 1 66 Co-fired ceramic, hex-in-line, single cavity, without standoffs Y See figure 1 68 Co-fired ceramic, single cavity, quad flatpack, with tie bars 4 See figure 1 66 Co-fired ceramic, 1.075″, hex-in-line, single cavity, with standoffs

The lead finish shall be as specified in MIL-PRF-38534.

Supply voltage range (VCC) ............................ −2.0 V dc to +7.0 V dc Signal voltage range (VG)(any pin except A9 2/) ....... −2.0 V dc to +7.0 V dc Power dissipation (PD) ................................ 1.32W Max.at 5 MHz Storage temperature range ............................. −65°C to +150°C Lead temperature (soldering, 10 seconds) .............. +300°C Data retention ........................................ 10 years minimum Endurance (write/erase cycles) ........................ 10,000 cycles minimum A9 voltage for sector protect (VID) 3/ ................ −2.0 V dc to +14.0 V dc

Supply voltage range (VCC) ............................ +4.5 V dc to +5.5 V dc Input low voltage range (VIL) ......................... −0.5 V dc to +0.8 V dc Input high voltage range (VIH) ........................ +2.0 V dc to VCC + 0.5 V dc Case operating temperature range (TC) ................. −55°C to +125°C A9 voltage for sector protect ......................... +11.5 V dc to +12.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

October 17, 2017
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY, 512K x 32-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
February 3, 2006
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
October 10, 2003
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
A description is not available for this item.
February 21, 2003
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
A description is not available for this item.
May 11, 2000
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest...
October 2, 1998
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
July 24, 1998
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), and class H, (highest reliability),and class K, (highest...
February 10, 1998
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions, class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-94612 REV A
November 21, 1996
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
July 31, 1996
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...

References

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