UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-94612 REV C

MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT

inactive
Organization: DLA
Publication Date: 24 July 1998
Status: inactive
Page Count: 35
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), and class H, (highest reliability),and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WF512K32-150, ACT-F512K32N-150 EPROM FLASH, 512K × 32-bit 150 ns 02 WF512K32-120, ACT-F512K32N-120 EPROM FLASH, 512K × 32-bit 120 ns 03 WF512K32-90, ACT-F512K32N-090 EPROM FLASH, 512K × 32-bit 90 ns 04 WF512K32-70, ACT-F512K32N-070 EPROM FLASH, 512K × 32-bit 70 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation D, E, G, H, or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

The lead finish shall be as specified MIL-PRF-38534.

Supply voltage range (VCC) .................................. −2.0 V dc to + 7.0 V dc Signal voltage range (VG) (any pin except A9 2/) ............ −2.0 V dc to + 7.0 V dc Power dissipation (PD) ...................................... 1.32W Max.at 5 MHZ Storage temperature range ................................... −65°C to + 150°C Lead temperature (soldering, 10 seconds) .................... +300°C Data retention .............................................. 10 years minimum Endurance (write/erase cycles) .............................. 10,000 cycles minimum A9 voltage for sector protect(VID) 3/ ....................... −2.0 V dc to + 14.0 V dc

Supply voltage range (VCC) .................................. +4.5 V dc to +5.5 V dc Input low voltage range (VIL) ............................... −0.5 V dc to +0.8 dc Input high voltage range (VIH) .............................. +2.0 V dc to VCC+ 0.5 V dc Case operating temperature range (TC) ....................... −55°C to +125°C A9 voltage for sector protect ............................... +11.5 V dc to + 12.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

October 17, 2017
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY, 512K x 32-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
February 3, 2006
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
October 10, 2003
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
A description is not available for this item.
February 21, 2003
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
A description is not available for this item.
May 11, 2000
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest...
October 2, 1998
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-94612 REV C
July 24, 1998
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), and class H, (highest reliability),and class K, (highest...
February 10, 1998
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions, class G (lowest high reliability), class H (high reliability), and class K, (highest...
November 21, 1996
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
July 31, 1996
MICROCIRCUIT, HYBRID, MEMORY, FLASH ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 512K X 32-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...

References

Advertisement