DLA - SMD-5962-96877 REV B
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 20 April 1998 |
| Status: | inactive |
| Page Count: | 28 |
Document History
June 25, 2014
MICROCIRCUIT, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
February 23, 2006
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-96877 REV B
April 20, 1998
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
March 16, 1998
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
September 6, 1996
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...