DLA - SMD-5962-96877
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 6 September 1996 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN is as shown in the following example:
Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) identify the circuit function as follows:
Device type Generic number 1/ Circuit function Access time 01 1M8CRH 128K × 8 Rad-Hard CMOS SRAM 40 ns
The device class designator is a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535
The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style X See figure 1 40 Flat pack
The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.
Supply voltage range (VDD) . . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc DC input voltage range (VIN) . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to VDD + 0.5 V 4/ DC output voltage range (VOUT) . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to VDD + 0.5 v 4/ Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Case operating temperature range . . . . . . . . . . . . . . . . . . . . −55°C to +125°C Lead temperature (soldering, 5 seconds) . . . . . . . . . . . . . . . . +250°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . . . . . . 3.5°C/W Maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . 2.0 W Maximum junction temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Supply voltage range (VDD) . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc Supply voltage reference (GND) . . . . . . . . . . . . . . . . . . . . 0.0 V High level input voltage range (VIH) . . . . . . . . . . . . . . . . . 3.5 V dc to VDD Low level input voltage range (VIL) . . . . . . . . . . . . . . . . . 0.0 V dc to + 1.5 V dc Case operating temperature range . . . . . . . . . . . . . . . . . . . −55°C to +125°C
Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . . . . . . 100 percent
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits... View More
Document History
